Intersubband transition in InGaAs/AlAsSb/InP coupled double quantum well structures optimised for communication wavelength operation
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20001354?crawler=true&mimetype=application/pdf
Reference8 articles.
1. Ultrafast all-optical modulation of interband-light pulses by ultrashort intersubband light pulses in semiconductor quantum wells
2. Near-infrared wavelength intersubband transitions in high indium content InGaAs/AlAs quantum wells grown on GaAs
3. Intersubband transitions in InGaAs/AlAs coupled double quantum well structures for multi-wavelength all-optical switching
4. Absorption saturation of near-infrared intersubband transition in lattice-matched InGaAs/AlAsSb quantum wells
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Modeling of Ultrafast Waveguided Electro-Absorption Modulator at Telecommunication Wavelength (λ = 1.55 μm) Based on Intersubband Transition in an InGaAs/AlAs/AlAsSb Asymmetric Coupled Double Quantum Well Lattice-Matched to InP;IEEE Journal of Quantum Electronics;2021-08
2. Three-energy-level system in asymmetric AlxGa1−xN/GaN double quantum wells;Journal of Physics D: Applied Physics;2008-02-22
3. 1.5-µm Intraband Transitions in PbSe Quantum Dots;Japanese Journal of Applied Physics;2003-02-01
4. Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm;Applied Physics Letters;2002-03-18
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