Three-energy-level system in asymmetric AlxGa1−xN/GaN double quantum wells
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0022-3727/41/i=6/a=065101/pdf
Reference16 articles.
1. Delayed luminescence induced by intersubband optical excitation in a charge transfer double quantum well structure
2. Intersubband absorption in degenerately doped GaN/AlxGa1−xN coupled double quantum wells
3. Coupled Electron-Phonon Modes in Optically Pumped Resonant Intersubband Lasers
4. Resonant cavity light emitting diodes with two single quantum wells of different widths
5. Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Influence of doping layer concentration on the electronic transitions in symmetric AlxGa(1⿿x)N/GaN double quantum wells;Optik - International Journal for Light and Electron Optics;2013-09
2. Near-infrared two-color intersubband transitions in AlN/GaN coupled double quantum wells;Journal of Applied Physics;2009-03
3. Intersubband transition in symmetric AlxGa1−xN/GaN double quantum wells with applied electric field;Physics Letters A;2008-12
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