Resonant cavity light emitting diodes with two single quantum wells of different widths
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1344912
Reference7 articles.
1. Effect of an AlAs/GaAs mirror on the spontaneous emission of an InGaAs‐GaAs quantum well
2. Enhanced spontaneous emission from GaAs quantum wells in monolithic microcavities
3. Resonant cavity light‐emitting diode
4. Enhanced spectral power density and reduced linewidth at 1.3 μm in an InGaAsP quantum well resonant‐cavity light‐emitting diode
5. Visible (660 nm) resonant cavity light-emitting diodes
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1. Influence of doping layer concentration on the electronic transitions in symmetric AlxGa(1⿿x)N/GaN double quantum wells;Optik - International Journal for Light and Electron Optics;2013-09
2. Three-energy-level system in asymmetric AlxGa1−xN/GaN double quantum wells;Journal of Physics D: Applied Physics;2008-02-22
3. Temperature-dependent optical properties of single quantum well with high nitrogen content for application grown by molecular beam epitaxy;Journal of Crystal Growth;2006-05
4. Evidence of Correlation between Dark Spots and Dislocations Originating from Substrate in Light-Emitting Diodes;Japanese Journal of Applied Physics;2005-02-08
5. Effect of fast thermal annealing on the optical spectroscopy in MBE- and CBE-grown GaInNAs/GaAs QWs: blue shift versus red shift;IEE Proceedings - Optoelectronics;2004-10-01
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