Intersubband transition in symmetric AlxGa1−xN/GaN double quantum wells with applied electric field
Author:
Publisher
Elsevier BV
Subject
General Physics and Astronomy
Reference20 articles.
1. Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm
2. Sub-picosecond electron scattering time for ≃ 1.55 [micro sign]m intersubband transitions in GaN/AlGaN multiple quantum wells
3. Ultrafast intersubband relaxation and nonlinear susceptibility at 1.55 μm in GaN/AlN multiple-quantum wells
4. Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructures
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1. Intersubband optical absorption in (In,Ga)N/GaN double quantum wells considering applied electric field effects;Journal of Computational Electronics;2022-01-29
2. Intraconduction band-related optical absorption in coupled (In,Ga)N/GaN double parabolic quantum wells under temperature, coupling and composition effects;Results in Optics;2021-12
3. Intersubband Transitions in Asymmetric Quantum Wells with External Electric Field;Applied Mechanics and Materials;2014-02
4. A simulation of intersubband absorption in ZnO/MgxZn1−xO quantum wells with an external electric field;Superlattices and Microstructures;2013-04
5. Intersubband energies in Al1−yInyN/Ga1−xInxN heterostructures with lattice constant close to aGaN;Superlattices and Microstructures;2012-07
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