Tip-induced passivation of dangling bonds on hydrogenated Si(100)-2 × 1
Author:
Affiliation:
1. IBM Research-Zurich, Säumerstrasse 4, 8803 Rüschlikon, Switzerland
Funder
H2020 European Research Council (ERC)
FP7 Ideas: European Research Council (FP7 Ideas)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4989749
Reference39 articles.
1. Nanoscale patterning and oxidation of H‐passivated Si(100)‐2×1 surfaces with an ultrahigh vacuum scanning tunneling microscope
2. Atomic-Scale Desorption Through Electronic and Vibrational Excitation Mechanisms
3. Atomically Precise Placement of Single Dopants in Si
4. Toward Atomic-Scale Device Fabrication in Silicon Using Scanning Probe Microscopy
5. Silicon-based molecular nanotechnology
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