Direct-current substrate bias effects on amorphous silicon sputter-deposited films for thin film transistor fabrication
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2061860
Reference8 articles.
1. Characteristics of amorphous and polycrystalline silicon films deposited at 120 °C by electron cyclotron resonance plasma-enhanced chemical vapor deposition
2. Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system
3. Low temperature fabrication of amorphous silicon thin film transistors by dc reactive magnetron sputtering
4. The improved stability of hydrogenated amorphous silicon films grown by reactive magnetron sputtering at high substrate temperature
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