Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.360782
Reference14 articles.
1. CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C
2. Characteristics of MOSFETs on large-grain polysilicon films
3. Electrical Characteristics of High-Mobility Fine-Grain Poly-Si TFTs from Laser Irradiated Sputter-Deposited Si Film
4. Characterization of plasma-deposited microcrystalline silicon
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