The role of implantation-induced point defects for the redistribution of oxygen in silicon at high-temperature processing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3020530
Reference33 articles.
1. SIMOX
2. Formation of ultrathin, buried oxides in Si by O+ ion implantation
3. Counter‐oxidation of superficial Si in single‐crystalline Si on SiO2structure
4. Growth of buried SiO2 layers in Si by thermal oxidation: Thermodynamic model
5. Investigations on High‐Temperature Thermal Oxidation Process at Top and Bottom Interfaces of Top Silicon of SIMOX Wafers
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diffusion and aggregation process of oxygen embedded around an amorphous/crystal interface of Si(001) studied by molecular dynamics simulation;Journal of Applied Physics;2017-05-14
2. A novel mechanism of ultrathin SOI synthesis by extremely low-energy hot O+implantation;Journal of Physics D: Applied Physics;2016-07-19
3. Direct synthesis of ultrathin SOI structure by extremely low-energy oxygen implantation;AIP Advances;2016-06
4. Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon;Solid State Phenomena;2009-10
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