Peaked Schottky‐barrier solar cells by Al‐Si metallurgical reactions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.89269
Reference14 articles.
1. The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes
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3. Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits
4. Diffusivity and Solubility of Si in the Al Metallization of Integrated Circuits
5. In-depth Auger analysis of aluminium-silicon interfacial reactions
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1. A silicon-wafer based p-n junction solar cell by aluminum-induced recrystallization and doping;Applied Physics Letters;2013-12-09
2. Thermal annealing of the epitaxial Al/Si(111)7×7 interface: Al clustering, interfacial reaction, and Al‐induced p+ doping;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-09
3. The compatibility of aluminium layers on plasma-deposited W and WSi/sub 2/ films;IEEE Transactions on Electron Devices;1988-05
4. Schottky Barrier Photodiodes;Metal-Semiconductor Schottky Barrier Junctions and Their Applications;1984
5. A study of grown-in impurities in silicon by deep-level transient spectroscopy;Solid-State Electronics;1983-11
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