The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes-Reference-Cited by-同舟云学术

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The nature of barrier height variations in alloyed Al-Si Schottky barrier diodes

Published:1975-03 Issue:3 Volume:18 Page:290
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Basterfield J.,Shannon J.M.,Gill A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Characteristics of aluminum-silicon schottky barrier diode

2. Behavior of AlSi Schottky barrier diodes under heat treatment

3. P.W.D. Webb, I. McLaren, M. Housham and R. Purkis, private communication

4. J. Basterfield and A. Gill, Solid-St. Electron. to be published

5. Solid‐phase epitaxial growth of Si mesas from al metallization

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