Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device-Reference-Cited by-同舟云学术

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Quantum conductance in MoS2 quantum dots-based nonvolatile resistive memory device

Published:2017-02-27 Issue:9 Volume:110 Page:093501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Dongliang¹,Ji Fengzhen¹,Chen Xinman¹,Li Yan¹,Ding Baofu¹,Zhang Yong¹

Affiliation:

1. Guangdong Provincial Key Laboratory of Nanophotonic Functional materials and Devices, Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Funder

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4977488

Reference25 articles.

1. Building devices from colloidal quantum dots

2. Solution-processed, high-performance light-emitting diodes based on quantum dots

3. Schottky Quantum Dot Solar Cells Stable in Air under Solar Illumination

4. A graphene quantum dot with a single electron transistor as an integrated charge sensor

5. Resistive switching characteristics of ZnO–graphene quantum dots and their use as an active component of an organic memory cell with one diode-one resistor architecture

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