Residual strains in amorphous silicon films measured by x‐ray double crystal topography
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.333083
Reference12 articles.
1. Measurement of Strains at Si‐SiO2 Interface
2. Measurement of Flexure in Silicon Wafers by the Lang X-ray Diffraction Technique†
3. X‐Ray Determination of Stresses in Thin Films and Substrates by Automatic Bragg Angle Control
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