Mössbauer spectroscopy of Sn‐doped GaAs grown by liquid‐phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.337595
Reference29 articles.
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Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The DX center and other tin-related defects in AlGaAs semiconductors;Hyperfine Interactions;1994-12
2. Chapter 6 DX and Related Defects in Semiconductors;Imperfections in III/V Materials;1993
3. Bistability, local symmetries and charge states of Sn-related donors in AlxGa1-xAs and GaAs under pressure studied by Mossbauer spectroscopy;Semiconductor Science and Technology;1991-10-01
4. Pressure-induced shallow-to-deep donor-state transition indoped119GaAs observed by Mössbauer spectroscopy;Physical Review Letters;1990-08-27
5. Deep donor levels (DXcenters) in III‐V semiconductors;Journal of Applied Physics;1990-02
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