Effect of HCl addition on gas-phase and surface reactions during homoepitaxial growth of SiC at low temperatures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2975990
Reference16 articles.
1. High quality 4H‐SiC epitaxial layers grown by chemical vapor deposition
2. Growth and Characterisation of Thick SiC Epilayers by High Temperature CVD
3. Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor
4. Epitaxial growth of 4H–SiC at low temperatures using CH3Cl carbon gas precursor: Growth rate, surface morphology, and influence of gas phase nucleation
5. Polytype Controlled SiC Epitaxy on On-axis 6H-SiC(0001) by Adding HCl during Growth
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1. Ultra-highly sensitive HCl-LITES sensor based on a low-frequency quartz tuning fork and a fiber-coupled multi-pass cell;Photoacoustics;2022-09
2. Process optimization for homoepitaxial growth of thick 4H-SiC films via hydrogen chloride chemical vapor deposition;Journal of Crystal Growth;2018-12
3. Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition;CrystEngComm;2016
4. Synthesis and structural control of silicon and silicide nanowires/microrods using metal chloride sources;Japanese Journal of Applied Physics;2015-06-03
5. Silicon Carbide Epitaxy;Handbook of Crystal Growth;2015
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