Metal/(100) GaAs interface: Case for a metal‐insulator‐semiconductor‐like structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102654
Reference27 articles.
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3. Surface States and Rectification at a Metal Semi-Conductor Contact
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1. Dispersion and tunneling analysis of the interfacial gate resistance in Schottky barriers;Physical Review B;1999-05-15
2. Current-voltage characteristics of Schottky barrier diodes with dynamic interfacial defect state occupancy;IEEE Transactions on Electron Devices;1996-07
3. Sulfide‐assisted reordering at the InP surface and SiNx/InP interface;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05
4. Nearly ideal characteristics of GaAs metal–insulator–semiconductor diodes by atomic layer passivation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1994-11
5. Orientation-dependent electronic properties of n-type GaAs in contact with various redox systems in acetonitrile and methanol;Semiconductor Science and Technology;1994-08-01
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