Sulfide‐assisted reordering at the InP surface and SiNx/InP interface-Reference-Cited by-同舟云学术

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Sulfide‐assisted reordering at the InP surface and SiNx/InP interface

Published:1995-05 Issue:3 Volume:13 Page:652-657
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kwok R. W. M.,Jin G.,So B. K. L.,Hui K. C.,Huang L.,Lau W. M.,Hsu C. C.,Landheer D.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.579801

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of Broad Emission Spectra in InP Quantum Dots: Contributions from Structural and Electronic Disorder;Journal of the American Chemical Society;2018-10-04

2. Effect of Ar+, He+, and S+ Irradiation on n-InP Single Crystal;Chinese Journal of Chemical Physics;2014-02-27

3. Structural and electrical analysis of S+ ion bombarded p-InP(100);Applied Surface Science;2006-11

4. Sulfur passivation of InP (100) by means of low energy sulfur ions;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2002-03

5. Surface roughness and oxide contents of gas-phase and solution-phase polysulfide passivation of III–V surfaces;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1999-01

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