Desorption of ultraviolet‐ozone oxides from InP under phosphorus and arsenic overpressures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359262
Reference10 articles.
1. Arsenic stabilization of InP substrates for growth of GaxIn1−xAs layers by molecular beam epitaxy
2. Oxide desorption from InP under stabilizing pressures of P2 or As4
3. An x‐ray photoelectron spectroscopy study on ozone treated InP surfaces
4. Protection of InP EPI-ready wafers by controlled oxide growth
5. Thermal desorption of oxides on InP
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1. Anomalous arsenic diffusion at InGaAs/InP interface;Materials Research Express;2018-12-19
2. Interfacial Chemistry of Oxides on III-V Compound Semiconductors;Fundamentals of III-V Semiconductor MOSFETs;2010
3. High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach;Applied Physics Letters;1999-12-06
4. Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP;Journal of Crystal Growth;1998-01
5. X-ray and UV photoelectron spectroscopy of oxide desorption from InP under As4 and/or Sb4 overpressures: exchange reaction As ⇔ Sb on InP surfaces;Journal of Crystal Growth;1997-08
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