Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth and characterizations of AlGaAsSb/AlAsSb Bragg reflectors on InP

Published:1998-01 Issue:1-2 Volume:183 Page:15-22
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Genty Frédéric,Almuneau Guilhem,Bertru Nicolas,Chusseau Laurent,Grech Pierre,Cot Didier,Jacquet Joel

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference20 articles.

1. 57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs

2. Resonant cavity enhanced photonic devices

3. High reflectivity 1.55 μm (Al)GaAsSb/AlAsSb Bragg reflector lattice matched on InP substrates

4. Growth of AlPSb and GaPSb on InP by gas-source molecular beam epitaxy

5. Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High minority carrier mobility and electronic diffusion length in annealed GaInAsSb/GaSb active layer in Vertical Cavity Surface Emitting Laser (VCSEL);Materials Research Bulletin;2023-07

2. Significant improvement of thermal conductivity and bandgap energy blue shift in annealed GaInAsSb/GaSb;Optics & Laser Technology;2021-05

3. Thermal annealing effects on AlGaAsSb/GaSb laser structure: Bandgap energy blueshift and thermal conductivity enhancement;Optical Materials;2017-07

4. An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells;Journal of Physics: Condensed Matter;2016-05-26

5. AlGaAsSb as a top cell material for InP-based triple-junction solar cells;SPIE Proceedings;2014-09-17

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