High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.125413
Reference12 articles.
1. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
2. Plastic relaxation and relaxed buffer layers for semiconductor epitaxy
3. New approach to grow pseudomorphic structures over the critical thickness
4. Compliant substrate technology: Status and prospects
5. “Compliant” twist-bonded GaAs substrates: The potential role of pinholes
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