Near-infrared quantum efficiency of uncooled photodetectors based on InGaAs/GaAsSb quantum wells lattice-matched to InP
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el.2011.2146?crawler=true&mimetype=application/pdf
Reference10 articles.
1. Strain compensated In1−xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation
2. High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach
3. Backside‐illuminated InAsSb/GaSb broadband detectors
4. A long-wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
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