Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs-Reference-Cited by-同舟云学术

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Characterization of solution-bonded GaAs/InGaAs/GaAs features on GaAs

Published:2014-05-01 Issue:7 Volume:29 Page:075009
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Mooney P M,Kavanagh K L,Owen D,Lackner D,Cawston-Grant B,Basile A F,Salehzadeh O,Watkins S P

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/29/i=7/a=075009/pdf

Reference20 articles.

1. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers

2. Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

3. New approach to grow pseudomorphic structures over the critical thickness

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Strain relaxation of semiconductor membranes: insights from finite element modeling;Semiconductor Science and Technology;2023-02-17

2. Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device;J INFRARED MILLIM W;2017

3. Electronic Raman scattering as an ultra-sensitive probe of strain effects in semiconductors;Nature Communications;2015-05-28

4. Electrical characterization of in-place bonded interfaces;Semiconductor Science and Technology;2014-06-01

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