Velocity dependence of maximum substitutional concentrations of In and Bi trapped in rapidly solidified Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96100
Reference8 articles.
1. Non-equilibrium dopants incorporation in silicon melted by laser pulses
2. Dependence of trapping and segregation of indium in silicon on the velocity of the liquid‐solid interface
3. Orientation and velocity dependence of solute trapping in Si
4. Growth interface breakdown during laser recrystallization from the melt
5. Interface instability and cell formation in ion‐implanted and laser‐annealed silicon
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Experimental test of morphological stability theory for a planar interface during rapid solidification;Physical Review B;1998-07-01
2. Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defects;Journal of Applied Physics;1993-07
3. The effect of temperature and doping on the segregation of In during solid‐phase‐epitaxial crystallization of Si;Journal of Applied Physics;1993-04
4. Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy;Journal of Materials Research;1993-04
5. Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn;Journal of Crystal Growth;1991-02
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