Non-equilibrium dopants incorporation in silicon melted by laser pulses-Reference-Cited by-同舟云学术

Non-equilibrium dopants incorporation in silicon melted by laser pulses

Published:1983-04 Issue:4 Volume:30 Page:195-211
ISSN:0721-7250
Container-title:Applied Physics A Solids and Surfaces
language:en
Short-container-title:Appl. Phys. A

Author:

Campisano S. U.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,Physics and Astronomy (miscellaneous),General Engineering,General Materials Science

Link

http://link.springer.com/content/pdf/10.1007/BF00614767.pdf

Reference76 articles.

1. J.F. Ready:Effects of High-Power Laser Radiation (Academic Press, New York 1971)

2. J.P. Carstens, L.L. Whitney: ?Industrial Applications of High-Power Lasers?. United Technologies Research Center, (Connecticut), report January 1980

3. E. Rimini (ed.):Laser Effects in Ion Implanted Semiconductors (Universit� di Catania) 1978 (unpublished)

4. S.D. Ferris, H.J. Leamy, J.M. Poate (ed.):Laser-Solid Interactions and Laser processing (American Institute of Physics, New York 1979) No. 50

5. C.W. White, P.S. Peercy (ed.):Laser and Electron Beam Processing of Materials (Academic Press, New York 1980)

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