Electrical activation of bismuth implanted into silicon by rapid thermal annealing and kinetics of defects
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354142
Reference14 articles.
1. Solid Solubilities of Impurity Elements in Germanium and Silicon*
2. THE ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON
3. Electrical Behavior of Group III and V Implanted Dopants in Silicon
4. Implantation and Annealing Behavior of Group III and V Dopants in Silicon as Studied by the Channeling Technique
5. The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon
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