High hole mobility in Si/Si1−xGex/Sip‐type modulation‐doped double heterostructures-Reference-Cited by-同舟云学术

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High hole mobility in Si/Si1−xGex/Sip‐type modulation‐doped double heterostructures

Published:1989-11-27 Issue:22 Volume:55 Page:2333-2335
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang P. J.,Meyerson B. S.,Fang F. F.,Nocera J.,Parker B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.102274

Reference20 articles.

1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices

2. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

3. Temperature dependence of the mobility of two‐dimensional hole systems in modulation‐doped GaAs‐(AlGa)As

4. High mobility hole gas and valence‐band offset in modulation‐dopedp‐AlGaAs/GaAs heterojunctions

5. High Electron Mobility Transistor Logic

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1. Local excitons in Si/Ge inverted quantum huts (IQHs) embedded Si;Journal of Physics: Condensed Matter;2021-08-05

2. Modulation-Doped Field-Effect Transistors (MODFET);Wiley Encyclopedia of Electrical and Electronics Engineering;2015-01-19

3. Modulation Doped FETs;Encyclopedia of RF and Microwave Engineering;2005-04-15

4. Hole mobility enhancement in strained-Si/strained-SiGe heterostructure p-MOSFETs fabricated on SiGe-on-insulator (SGOI);Semiconductor Science and Technology;2004-02-19

5. SiGe Technology;VLSI Technology;2003-03-19

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