High mobility hole gas and valence‐band offset in modulation‐dopedp‐AlGaAs/GaAs heterojunctions
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.95339
Reference11 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. Electron mobilities in modulation-doped GaAs-(AlGa)As heterostructures
3. Transport properties of selectively doped GaAs‐(AlGa)As heterostructures grown by molecular beam epitaxy
4. High mobility electron gas in selectively doped n:AlGaAs/GaAs heterojunctions
5. Improved Electron Mobility Higher than 106cm2/Vs in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE
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