Development of an ion beam alignment system for real-time scanning tunneling microscope observation of dopant-ion irradiation
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2957608
Reference9 articles.
1. Enhancing semiconductor device performance using ordered dopant arrays
2. A silicon-based nuclear spin quantum computer
3. Scanning tunneling microscopy and spectroscopy of ion-bombarded Si(111) and Si(100) surfaces
4. Damage evolution and surface defect segregation in low-energy ion-implanted silicon
5. STM observation of surface vacancies created by ion impact
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Challenge for STM observation of dopant activation process on Si(001): in-situ ion irradiation and hydrogenation;physica status solidi (c);2012-03-15
2. Real-Time Scanning Tunneling Microscopy of Au Ion Irradiation Effects on Si(111) Surface;Hyomen Kagaku;2012
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