Dielectric breakdown field of strained silicon under hydrostatic pressure
Author:
Affiliation:
1. Department of Materials Science and Engineering, and Institute of Materials Science, University of Connecticut, 97 North Eagleville Road, Storrs, Connecticut 06269-3136, USA
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5003344
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1. Strain-engineered artificial atom as a broad-spectrum solar energy funnel
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3. The Integration of Sub-10 nm Gate Oxide on MoS2 with Ultra Low Leakage and Enhanced Mobility
4. Sub-10 nm Carbon Nanotube Transistor
5. Mechanoelectrochemical Catalysis of the Effect of Elastic Strain on a Platinum Nanofilm for the ORR Exerted by a Shape Memory Alloy Substrate
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