Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys-Reference-Cited by-同舟云学术

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Preferential incorporation of substitutional nitrogen near the atomic step edges in diluted nitride alloys

Published:2012-12-17 Issue:25 Volume:101 Page:251906
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cornet C.,Nguyen Thanh T.,Quinci T.,Almosni S.,Rohel T.,Kuyyalil J.,Rambaud A.,Létoublon A.,Bertru N.,Durand O.,Le Corre A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4772785

Reference25 articles.

1. GaInNAs long-wavelength lasers: progress and challenges

2. Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

3. Solar cell efficiency tables (version 40)

4. Influence of alloy stability on the photoluminescence properties of GaAsN/GaAs quantum wells grown by molecular beam epitaxy

5. Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy

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2. Radiative and nonradiative recombination processes in GaNP(As) alloys;Materials Science and Engineering: B;2022-02

3. Investigation of the effect of different thicknesses and thermal annealing on the optical properties of GaAs0.1P0.89N0.01 alloys grown on GaP substrates;Materials Science in Semiconductor Processing;2020-10

4. Improvement of carriers diffusion length and mobility in annealed GaAsPN materials for intermediate band solar cells;Solar Energy Materials and Solar Cells;2020-09

5. Effects of nitrogen incorporation and thermal annealing on the optical and spin properties of GaPN dilute nitride alloys;Journal of Alloys and Compounds;2020-01

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