Study of nitrogen incorporation into GaInNAs: The role of growth temperature in molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4737127
Reference32 articles.
1. Low threshold InGaAsN/GaAs lasers beyond 1500nm
2. 11 W single gain-chip dilute nitride disk laser emitting around 1180 nm
3. Breakeven criteria for the GaInNAs junction in GaInP/GaAs/GaInNAs/Ge four-junction solar cells
4. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy
5. Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors
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