Surface-reconstruction-enhanced solubility of N, P, As, and Sb in III-V semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119827
Reference19 articles.
1. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
2. Growth of GaAsN alloys by low‐pressure metalorganic chemical vapor deposition using plasma‐cracked NH3
3. N incorporation in InP and band gap bowing of InNxP1−x
4. N incorporation in GaP and band gap bowing of GaNxP1−x
5. Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond Structure
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