Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy-Reference-Cited by-同舟云学术

Interfacial stress characterization of GaN epitaxial layer with sapphire substrate by confocal Raman spectroscopy

Published:2021-06-01 Issue:2 Volume:4 Page:023002
ISSN:1672-6030
Container-title:Nanotechnology and Precision Engineering
language:en
Short-container-title:Nanotechnology and Precision Engineering

Author:

Zhang Zengqi¹,Xu Zongwei¹^ORCID,Song Ying¹,Liu Tao¹,Dong Bing¹,Liu Jiayu¹,Wang Hong²

Affiliation:

1. State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin 300072, China

2. State Key Laboratory of Separation Membranes and Membrane Processes, School of Materials Science and Engineering, Tianjin Polytechnic University, Tianjin 300387, China

Publisher

AIP Publishing

Subject

Automotive Engineering

Link

https://aip.scitation.org/doi/pdf/10.1063/10.0003818

Reference34 articles.

1. Influence of an in situ-deposited intermediate layer inside GaN and AlGaN layers on SiC substrates

2. Effect of the transition porous silicon layer on the properties of hybrid GaN/SiC/por-Si/Si(1 1 1) heterostructures

3. High-Quality and Strain-Relaxation GaN Epilayer Grown on SiC Substrates Using AlN Buffer and AlGaN Interlayer

4. Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN

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