200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3159819
Reference16 articles.
1. 2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
2. Comprehensive analysis of the internal losses in 2.0μm (AlGaIn)(AsSb) quantum-well diode lasers
3. Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm
4. Low Threshold High-Power Room-Temperature Continuous-Wave Operation Diode Laser Emitting at 2.26<tex>$muhboxm$</tex>
5. Room-temperature 2.5 μm InGaAsSb/AlGaAsSb diode lasers emitting 1 W continuous waves
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