On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors-Reference-Cited by-同舟云学术

On trapping mechanisms at oxide-traps in Al2O3/GaN metal-oxide-semiconductor capacitors

Published:2016-03-14 Issue:11 Volume:108 Page:112104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bisi D.¹,Chan S. H.²,Liu X.³,Yeluri R.³^ORCID,Keller S.³,Meneghini M.¹,Meneghesso G.¹^ORCID,Zanoni E.¹,Mishra U. K.³

Affiliation:

1. Department of Information Engineering, University of Padova, Via Gradenigo 6/B, Padova 35131, Italy

2. Materials Department, University of California, Santa Barbara, California 93106, USA

3. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

Office of Naval Research (ONR)

U.S. Department of Energy (DOE)

Advanced Research Projects Agency - Energy (ARPA-E)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4944466

Reference26 articles.

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3. T. D. Heidel and P. Gradzki , “ Power devices on bulk gallium nitride substrates: An overview of ARPA-E's SWITCHES program,” in IEEE International Electron Device Meeting (2014), p. 2.7.1.

4. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

5. Gallium nitride based power switches for next generation of power conversion

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