dc characterization of the Ga0.51In0.49P/GaAs tunneling emitter bipolar transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107062
Reference13 articles.
1. A tunneling emitter bipolar transistor
2. dc characterization of the AlGaAs/GaAs tunneling emitter bipolar transistor
3. Determination of valence and conduction‐band discontinuities at the (Ga,In) P/GaAs heterojunction byC‐Vprofiling
4. Interface properties for GaAs/InGaAlP heterojunctions by the capacitance‐voltage profiling technique
5. High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy
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1. Dual-band infrared single-layer metallodielectric photonic crystals;Applied Physics Letters;2004-09-06
2. Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures;Semiconductor Science and Technology;2001-12-19
3. Characterization of the inverted Ga0.52In0.48P/GaAs (001) junctions using current–voltage and capacitance–voltage measurements;Applied Physics Letters;1999-02
4. Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics;Journal of Applied Physics;1997-11
5. High-Performance In0.49Ga0.51P/GaAs Tunneling Emitter Bipolar Transistors;Japanese Journal of Applied Physics;1993-01-30
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