Optical characterization of stress in narrow GaAs stripes on patterned Si substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.101894
Reference14 articles.
1. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
2. Significant improvement in crystalline quality of molecular beam epitaxially grown GaAs on Si (100) by rapid thermal annealing
3. Optical and structural properties of GaAs grown on (100) Si by molecular‐beam epitaxy
4. Stress variations due to microcracks in GaAs grown on Si
5. Stress variations and relief in patterned GaAs grown on mismatched substrates
Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Stability of dislocations in epitaxially strained semiconductor stripe films;Semiconductor Science and Technology;1996-09-01
2. Stresses and strains in lattice‐mismatched stripes, quantum wires, quantum dots, and substrates in Si technology;Journal of Applied Physics;1996-06
3. Stresses and strains in epilayers, stripes and quantum structures of III - V compound semiconductors;Semiconductor Science and Technology;1996-05-01
4. Two‐dimensional finite‐element calculation of stress and strain in a stripe epilayer and substrate;Philosophical Magazine A;1995-04
5. Strain, dislocations, and critical dimensions of laterally small lattice‐mismatched semiconductor layers;Journal of Applied Physics;1995-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3