Desorption of InSb(001) native oxide and surface smoothing induced by low temperature annealing under molecular hydrogen flow
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2431091
Reference19 articles.
1. Growth of III–V semiconductors by molecular beam epitaxy and their properties
2. Growth of Sb and InSb by molecular‐beam epitaxy
3. Atomic hydrogen cleaning, nitriding and annealing InSb (100)
4. Atomic hydrogen cleaning of polar III–V semiconductor surfaces
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4. Native oxides and carbon contamination removal from InAs(100) surface by molecular hydrogen flow at moderate substrate temperatures: Stoichiometric and morphological studies;Journal of Applied Physics;2010-03
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