Native oxides and carbon contamination removal from InAs(100) surface by molecular hydrogen flow at moderate substrate temperatures: Stoichiometric and morphological studies-Reference-Cited by-同舟云学术

Native oxides and carbon contamination removal from InAs(100) surface by molecular hydrogen flow at moderate substrate temperatures: Stoichiometric and morphological studies

Published:2010-03 Issue:5 Volume:107 Page:053518
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Lyadov Y.,Akhvlediani R.,Hoffman A.,Klin O.,Weiss E.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3311549

Reference10 articles.

1. Surface structures of InP and InAs thermally cleaned in an arsenic flux

2. UV/ozone-activated growth of oxide layers on InAs(001) surfaces and oxide desorption under arsenic pressure

3. Surface modification of InAs(110) surface by low energy ion sputtering

4. Valence band and In-4d core level photoemission study of de-capped and ion-bombarded-annealed InAs(001) epitaxial surfaces

5. Preparation of clean reconstructed InAs(001) surfaces using HCl/isopropanol wet treatments

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4. Synchrotron radiation photoemission study of the thermal annealing and atomic hydrogen cleaning of native oxide covered InAs(100) surfaces;Applied Surface Science;2013-07

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