Surface and interfacial reaction study of InAs(100)-crystalline oxide interface-Reference-Cited by-同舟云学术

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Surface and interfacial reaction study of InAs(100)-crystalline oxide interface

Published:2013-05-27 Issue:21 Volume:102 Page:211601
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhernokletov D. M.,Laukkanen P.,Dong H.,Galatage R. V.,Brennan B.,Yakimov M.,Tokranov V.,Kim J.,Oktyabrsky S.,Wallace R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4807766

Reference29 articles.

1. Defect states at III-V semiconductor oxide interfaces

2. Oxidized In-containing III-V(100) surfaces: Formation of crystalline oxide films and semiconductor-oxide interfaces

3. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors

4. Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO2 Interfaces

5. MBE growth of InAsN on (100) InAs substrates

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1. Passivation capping of InAs surface quantum dots by TMA/Al2O3: PL enhancement and blueshift suppression;Journal of Applied Physics;2023-05-10

2. In situ isotope study of indium diffusion in InP/Al₂O₃ stacks;Applied Physics Letters;2022-01-17

3. Study of the role of air exposure time to interface oxide on HCl treated InAs (100) before atomic layer deposition of Al2O3;Vacuum;2021-11

4. Passivation of III–V surfaces with crystalline oxidation;Applied Physics Reviews;2021-03

5. First-principles study of BiFeO3 and BaTiO3 in tetragonal structure;International Journal of Modern Physics B;2019-08-20

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