Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment-Reference-Cited by-同舟云学术

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

Published:2014-10-07 Issue:13 Volume:116 Page:133702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ahmadi Elaheh¹,Chalabi Hamidreza²,Kaun Stephen W.³,Shivaraman Ravi³,Speck James S.³,Mishra Umesh K.¹

Affiliation:

1. Electrical and Computer Engineering Department, University of California, Santa Barbara, California 93106, USA

2. Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA

3. Materials Department, University of California, Santa Barbara, California 93106, USA

Funder

Center for Energy Efficient Materials

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896967

Reference28 articles.

1. Self-Aligned N-Polar GaN/InAlN MIS-HEMTs With Record Extrinsic Transconductance of 1105 mS/mm

2. Molecular beam epitaxy for high-performance Ga-face GaN electron devices

3. N-polar GaN epitaxy and high electron mobility transistors

4. Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures

5. Dislocation scattering in a two-dimensional electron gas

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