Correlations between plasma parameters and the deposition of microcrystalline silicon films by plasma of argon and hydrogen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339852
Reference24 articles.
1. Mechanism and kinetics of tetrachlorosilane reactions in an argon‐hydrogen microwave plasma
2. Dissociation mechanism of chlorosilane to silicon in low pressure microwave plasmas of argon and argon with hydrogen mixtures
3. The role of hydrogen in the radical polymerization mechanism of hydrocarbons and chlorosilanes in a low pressure microwave plasma
4. Radical-molecule and ion-molecule mechanisms in the polymerization of hydrocarbons and chlorosilanes in r.f. plasmas at low pressures (below 1.0 Torr)
5. Reactions of He+, Ne+, and Ar+ with CH4, C2H6, SiH4, and Si2H6
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1. High rate deposition and electron beam recrystallization of silicon films for solar cells;Thin Solid Films;2001-12
2. High rate–low temperature deposition of silicon dioxide films by remote plasma enhanced chemical vapor deposition using silicon tetrachloride;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-11
3. Process and property relationships in hard coatings made by plasma- and ion-assisted methods;Surface and Coatings Technology;1992-05
4. Process and property relationships in hard coatings made by plasma and ion-assisted methods;Pure and Applied Chemistry;1992-01-01
5. Chemical Vapor Deposition Under Plasma Conditions;Film Deposition by Plasma Techniques;1992
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