On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals-Reference-Cited by-同舟云学术

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On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals

Published:2020-08-03 Issue:5 Volume:117 Page:052101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Rujun¹^ORCID,Ooi Yu Kee¹,Dickens Peter T.²,Lynn Kelvin G.²,Scarpulla Michael A.¹³^ORCID

Affiliation:

1. Electrical and Computer Engineering, University of Utah, Salt Lake City, Utah 84112, USA

2. Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164, USA

3. Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112, USA

Funder

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0012967

Reference50 articles.

1. A review of Ga2O3materials, processing, and devices

2. Acceptor doping of β-Ga2O3 by Mg and N ion implantations

3. Lateral β-Ga2O3 field effect transistors

4. Oxygen vacancies and donor impurities in β-Ga2O3

5. Hydrogenated cation vacancies in semiconducting oxides

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1. Structural, optical and mechanical properties of Cr doped β-Ga2O3 single crystals;Applied Physics A;2024-09-12

2. Electron irradiation effects on the optical properties of Hf- and Zn-doped β-Ga2O3;Journal of Applied Physics;2024-05-08

3. Evaluation of Fe-βGa₂O₃ for Photoconductive Semiconductor Switching;IEEE Transactions on Electron Devices;2024-03

4. Polarized photoluminescence from Sn, Fe, and unintentionally doped β-Ga2O3;Journal of Vacuum Science & Technology A;2024-01-11

5. Impact of electron irradiation on semi-insulating and conductive β-Ga₂O₃ single crystals;Physical Chemistry Chemical Physics;2024

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