High mobility In0.53Ga0.47As quantum-well metal oxide semiconductor field effect transistor structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4721328
Reference17 articles.
1. Self-heating simulation of GaN-based metal-oxide-semiconductor high-electron-mobility transistors including hot electron and quantum effects
2. Simulation and optimization of GaN-based metal-oxide-semiconductor high-electron-mobility-transistor using field-dependent drift velocity model
3. Mobility and remote scattering in buried InGaAs quantum well channels with high-k gate oxide
4. Electron Scattering in Buried InGaAs/High-k MOS Channels
5. Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors
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1. High Performance and Reliability Analysis of Implant Free Composite Channel In0.53Ga0.47As/InAs/In0.53Ga0.47As Delta-Doped MOSFET;Iranian Journal of Science and Technology, Transactions of Electrical Engineering;2020-11-11
2. Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN;Journal of Applied Physics;2017-11-07
3. Preventing phase separation in MOCVD-grown InAlAs compositionally graded buffer on silicon substrate using InGaAs interlayers;Journal of Crystal Growth;2017-11
4. Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications;AEU - International Journal of Electronics and Communications;2017-09
5. A review of InP/InAlAs/InGaAs based transistors for high frequency applications;Superlattices and Microstructures;2015-10
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