Gain‐current characteristics of strained AlGaInP quantum well lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.110336
Reference10 articles.
1. High‐power, very low threshold, GaInP/AlGaInP visible diode lasers
2. Effects of strained‐layer structures on the threshold current density of AlGaInP/GaInP visible lasers
3. Low threshold, 633 nm, single tensile‐strained quantum well Ga0.6In0.4P/(AlxGa1−x)0.5In0.5P laser
4. High temperature (≳150 °C) and low threshold current operation of AlGaInP/GaxIn1−xP strained multiple quantum well visible laser diodes
5. AlGaInP visible laser diodes grown on misoriented substrates
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Carrier transport in AlGaInP laser structures;Physics and Simulation of Optoelectronic Devices VII;1999-08-06
2. Thermal limitation of self-pulsation in 650 nm AlGaInP laser diodes with an epitaxially integrated absorber;Applied Physics Letters;1997-11-03
3. Comparison of experimental and theoretical GaInP quantum well gain spectra;Applied Physics Letters;1997-07-14
4. Experimental investigation of the differential gain in semiconductor lasers and its influence on Q‐switching performance;Applied Physics Letters;1996-09-30
5. Compositional disordering of Al0.3Ga0.7As/GaAs superlattices by solid phase regrowth;Physica Status Solidi (a);1996-02-16
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