Effect of void shape in Czochralski-Si wafers on the intensity of laser-scattering
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1368176
Reference14 articles.
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1. Defect behavior during growth of heavily phosphorus doped Czochralski silicon crystals (II): Theoretical study;Journal of Applied Physics;2024-08-01
2. First principles analysis on void-reduction mechanism and impact of oxygen in nitrogen-doped CZ-Si crystal;Journal of Crystal Growth;2023-05
3. Density functional theory study on concentration of intrinsic point defects in growing N-doped Czochralski Si crystal;Journal of Crystal Growth;2021-10
4. Detection of Kite-Shaped COPs in Nitrogen-Doped Czochralski-Grown Silicon Wafers;Electrochemical and Solid-State Letters;2004
5. Microvoid Defects in Nitrogen- and/or Carbon-doped Czochralski-grown Silicon Crystals;Japanese Journal of Applied Physics;2003-02-15
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