High‐power InGaAs‐GaAs strained quantum well lasers with InGaP cladding layers onp‐type GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351437
Reference10 articles.
1. Ultralow recombination velocity at Ga0.5In0.5P/GaAs heterointerfaces
2. Thermal conductivity of binary, ternary, and quaternary III‐V compounds
3. High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition
4. Low‐threshold InGaAs strained‐layer quantum‐well lasers (λ=0.98 μm) with GaInP cladding layers and mass‐transported buried heterostructure
5. Self‐aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas‐source molecular beam epitaxy with two growth steps
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1. Optimizing the reactive ion etching of p-InGaP with CH4/H2 by a two-level fractional factorial design process;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1996-09
2. Tunneling injection lasers: a new class of lasers with reduced hot carrier effects;IEEE Journal of Quantum Electronics;1996
3. 0.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer;IEEE Journal of Selected Topics in Quantum Electronics;1995-06
4. High power 875 nm Al-free laser diodes;IEEE Photonics Technology Letters;1994-04
5. Aluminum-free 980-nm GaInAs/GaInAsP/GaInP pump lasers;IEEE Journal of Quantum Electronics;1994
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