Optimizing the reactive ion etching of p-InGaP with CH4/H2 by a two-level fractional factorial design process
-
Published:1996-09
Issue:5
Volume:14
Page:3219
-
ISSN:0734-211X
-
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
-
language:
-
Short-container-title:J. Vac. Sci. Technol. B
Publisher
American Vacuum Society
Subject
General Engineering