High power 1.017‐μm strained‐layer quantum well lasers grown by metalorganic chemical‐vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107306
Reference7 articles.
1. Operating characteristics of InGaAs/AlGaAs strained single quantum well lasers
2. Characterization of InGaAs‐GaAs strained‐layer lasers with quantum wells near the critical thickness
3. InGaAs‐GaAs strained‐layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition
4. Reliable InGaAs quantum well lasers at 1.1 μm
5. Defects in epitaxial multilayers
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1. High-Power InGaAs-GaAs-InGaP Strained Quantum Well Lasers on P-Type GaAs Substrate;Japanese Journal of Applied Physics;1995-05-15
2. Optoelectronic Devices;Handbook of Compound Semiconductors;1995
3. Strained GaInAsP/InP multiple-quantum-well lasers for wideband analog and high-speed digital fiber-optic networks;Microwave and Optical Technology Letters;1994-02-20
4. High-power 0.98-μm strained-layer quantum-well lasers with InGaP cladding;Microwave and Optical Technology Letters;1994-02-20
5. Effects of well number in 1.3-μm GaInAsP/InP GRIN-SCH strained-layer quantum-well lasers;IEEE Journal of Quantum Electronics;1994
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