Electrical properties of highly strained modulation-doped InAs/GaAs (110) quantum-well heterostructures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369251
Reference24 articles.
1. Role of misfit dislocations on pseudomorphic high electron mobility transistors
2. Interface structure of InAs grown on GaAs(001) surfaces by molecular beam epitaxy
3. The morphology and asymmetric strain relief behaviour of InAs films on GaAs (110) grown by molecular beam epitaxy
4. Growth of Si-doped GaAs(110) thin films by molecular beam epitaxy; Si site occupation and the role of arsenic
5. Relaxation and recovery of highly strained InGaAs/GaAs quantum wells
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1. Band alignment of semiconductors from density-functional theory and many-body perturbation theory;Physical Review B;2014-10-03
2. Step graded buffer for (110) InSb quantum wells grown by molecular beam epitaxy;Journal of Crystal Growth;2014-10
3. Modified atomic scattering amplitudes and size effects on the 002 and 220 electron structure factors of multiple Ga1−xInxAs/GaAs quantum wells;Journal of Applied Physics;2009-04-15
4. Correlation of self-organized surface nanostructures and anisotropic electron transport in nonpolar ZnO (10−10) homoepitaxy;Journal of Applied Physics;2006-06-15
5. Direct observation of electrical charges at dislocations in GaAs by cross-sectional scanning tunneling microscopy;Applied Physics Letters;2001-01-22
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