Relaxation and recovery of highly strained InGaAs/GaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102140
Reference15 articles.
1. Defects in epitaxial multilayers
2. Defects in epitaxial multilayers
3. Excess stress and the stability of strained heterostructures
4. Reflection high‐energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures
5. Summary Abstract: The growth of strained InGaAs on GaAs: Kinetics versus energetics
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1. Thermal Stability of InGaAs Quantum Dots Under Large Temperature Transients;MRS Proceedings;2004
2. Electrical properties of highly strained modulation-doped InAs/GaAs (110) quantum-well heterostructures;Journal of Applied Physics;1999-01-15
3. Breaking up of misfit dislocations in GaAs/In0.3Ga0.7As/GaAs heterostructure;Applied Physics Letters;1995-08-07
4. Reflection High Energy Electron Diffraction Studies of the Dynamics of Molecular Beam Epitaxy;Molecular Beam Epitaxy;1995
5. Strain buildup in InxGa1−xAs partially relaxed quantum well;Journal of Applied Physics;1994-07-15
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